An alliance of IBM, Chartered Semiconductor, Infineon Technologies, Samsung and STMicroelectronics says it has defined and is jointly developing a 28 nm, high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process.
The group claims 28 nm platform can provide power-performance and time-to-market advantages for producers of a broad range of power-sensitive mobile and consumer electronics applications, including the fast-growing mobile Internet device market segment. The favourable leakage characteristics of the HKMG technology result in optimised battery life for the next generation of mobile products.
Preliminary results working with early access clients and partners indicate the 28 nm technology platform can provide a 40 percent performance improvement and a more than 20 percent reduction in power —in a chip that is half the size — compared with 45 nm technology. The high-k metal gate implementation allows a SRAM cells of 0.120 square microns, with low minimum voltage operation and competitive performance, leakage and stability.
“This statement of commitment to 28 nm low-power technology by the IBM Joint Development Alliance is an important progression from 32 nm high-k metal gate technology,” says Jorgen Lantto, chief technology officer of ST-Ericsson. “Leaders in the mobile industry can utilise 28 nm low-power technology to meet the increasingly aggressive demands for performance and improved battery life.”
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