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Samsung starts 20nm 4Gb LPDDR2 memory

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Samsung starts 20nm 4Gb LPDDR2 memory
SAMSUNG Electronics has started producing the industry’s first 4Gb, low power double-data-rate 2 (LPDDR2) memory utilising 20nm class technology.

The mobile DRAM chip went into mass production in March, and is expected to help in the delivery of advanced devices that are faster, lighter and provide longer battery life than today’s mobile devices.

Samsung is looking to ramp up its 20nm process later on in the year, making the 4Gb DRAM line its mainstream product.

In 2011, the company was the first to mass-produce 30nm-class 4Gb DRAM, and is now targeting the advanced memory market with the 20nm-class.

Samsung’s 20nm-class 4Gb mobile DRAM represents the thinnest, highest-density, and highest-performance mobile memory, which enables ultra-slim mobile designs with lower power use.

Based on the 4Gb components, Samsung can also deliver 2GB solutions which are only 0.8mm thin, stacking four 4Gb LPDDR2 chips in a single LPDDR2 package.

The new 2GB package can process data at up to 1,066 megabits per second (Mbps), while spending the same amount of power as that of a previous 30nm-class 2GB package.

 

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