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Cypress claims first SRAM at 65 nm

  •  11 May 2009
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Cypress claims first SRAM at 65 nm

Cypress Semiconductor (distributed in Australia by Future Electronics) says it is sampling the industry’s first Quad Data Rate (QDR) and Double Data Rate (DDR) SRAM devices fabricated using 65 nm technology.

The company claims the SRAMs feature the market’s fastest available clock speed of 550 MHz and a total data rate of 80 Gbps in a 36-bit I/O width QDRII+ device, using half the power of 90 nm SRAMs. The devices are pin compatible with 90 nm SRAMs, which the company says enables networking customers to increase performance and port density while maintaining the same board layout. Compared with 90 nm devices, the 65 nm QDR and DDR SRAMs lower input and output capacitance by 60 percent.

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