The family of new devices combines IR's latest generation 30 V HEXFET power MOSFET silicon and DirectFET packaging technology to achieve a 40 per cent smaller footprint compared to a standard SO-8 device, and features a slim 0.7mm profile.
It achieves very low on-state resistance (RDS(on)) while minimising gate charge (Qg) and gate-to-drain charge (Qgd) together with ultra-low package inductance to reduce both conduction and switching losses.
"By leveraging our benchmark power MOSFET silicon and DirectFET packaging, the new 30 V devices are characterised with very low RDS(on), Qg and Qgd to deliver increased efficiency and thermal performance over the entire load. This also allows operation up to 25A per phase, while maintaining the small form factor of a single control and a single synchronous MOSFET," said David Poon, IR's Vice President, Asia Sales.
The IRF6724M, IRF6725M, IRF6726M, and IRF6727M are characterised with very low RDS(on) making them well suited for high current synchronous MOSFETs.
These new devices have a common MT and MX footprint as previous generation devices to allow easy migration into applications where increased current levels or improved thermal performance is required.
They are ideally suited for control MOSFETs and are available in SQ, ST, and MP footprints for greater design flexibility.