The chipset includes a baseband LSI, MB86K22; an RF LSI, MB86K52; and a power management LSI, MB39C316. The chipset was designed to fit in the 12x12mm WiMAX module. The standby current, which has a direct impact on battery life, will not exceed 0.5mA, facilitating the development of more competitive mobile WiMAX terminals.
Next-generation mobile WiMAX technology will be deployed in the United States, Europe, and Taiwan this year, and in Japan next year. The initial service will be provided through PC-based mobile broadband access, with simultaneous development of portable devices, smart phones, PDAs, portable games and navigation systems supporting the Mobile WiMAX technology.
The MB86K22 is a fully integrated baseband LSI built using Fujitsu Microelectronics 65nm CMOS low-leakage process technology. The operating power of MB86K22 has been reduced by 36 per cent from the previous generation. Power-gating technology shuts down the power supply in the unused blocks inside the device, so that the entire mobile WiMAX module consumes only 0.5mA, thereby extending battery life.
The MB86K52 is an RF LSI built using CMOS process technology, which supports 2.3GHz, 2.5GHz, and 3.5GHz, covering almost all the frequencies set by the WiMAX Forum. This enables mobile WiMAX terminal manufacturers to introduce their devices globally. It also supports MIMO and beamforming technology, which is essential for mobile WiMAX Wave 2.
The MB39C316 power management LSI eliminates all the complex and time-consuming power management requirements by adopting one-cell battery. This design minimises the number of external peripheral devices of a module. It controls and manages the power schemes of a module at the system level, keeping the power consumption in every operation to the minimum.